sot-89-3l 1. base 2. collector 3. emitter transistor(npn) features z small flat package z high speed switching time z low collector-emitter saturation voltage applications z power amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v, i c =0.5a 70 240 dc current gain h fe(2) * v ce =2v, i c =2a 20 collector-emitter saturation voltage v ce(sat) i c =1a,i b =50ma 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b =50ma 1.2 v transition frequency f t v ce =2v,i c =0.5a,f=100mhz 120 mhz classification of h fe(1) rank p q y range 82 C 180 120 C 270 180 C 390 marking p1766 q1766 y1766 *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 2 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2SC1766 1 www.htsemi.com semiconductor jinyu
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